CHAUSSENDE Didier

Research Director - CNRS
SIMAP-EPM Lab., BP75 – Domaine Universitaire, 1340 rue de la Piscine 38402 St Martin d’Hères Cedex, FRANCE
Contact mail

Research activities

Research Topics

My research activity adresses the Physical-Chemistry of High Temperature Reaction Systems. It is based on different projects, such as :

  • Crystal growth of Silicon Carbide (3C, 4H, 15R polytypes) from solution of from the vapor phase
  • Crystal growth of Aluminum Nitride from the vapor phase
  • Synthesis and properties of MAX phases
  • Synthesis and properties of new carbides semiconductors, mainly from the Al-Si-C ternary system
  • Multiscale interactions between extended defects and growth fronts 


Keywords

Crystal growth from solution, crystal growth from the vapor, nucleation and growth, dopant, wide bandgap semiconductors, SiC, AlN, MAX phases, carbides, nitrides, new process concepts, synthesis, high temperatures, surface mechanisms, defects, thermodynamics, simulation
 

Activities / Resume

2017 : Research Director at CNRS, SIMAP Lab., Saint-MArtin d'Hères, France
2017 : Invited Researcher, Institute of Industrial Sciences, Yoshikawa Lab., The University of Tokyo
2016 : Visiting Researcher, Institut Neel, SC2G team, CNRS Grenoble, France
2014 : Research Director at CNRS, LMGP Lab., Grenoble, France
2011 : Head of the "Crystal growth" group, LMGP Lab., Grenoble, France
2003 : Research Scientist at CNRS, LMGP Lab., Grenoble, France
2000 : R&D Engineer, NOVASiC, Le Bourget du Lac, France
2000 : PhD in Inorganic Chemistry, University of Lyon, France