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Science and Engineery of Materials and Processes



CNRS Research Director

Contact details

SIMaP - Phelma 1130 rue de la piscine BP 75 38402 Saint Martin D' Hères

Personal Website :

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Research activities

Developments of CVD  (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) Deposition processes   of nitrides, oxides, silicides for energy

Recent publications:
The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates
E.V. Skopin, L.Rapenne, H. Roussel, J.-L. Deschanvres, E. Blanquet, G.Ciatto, D. Fong, M.-I. Richard, H. Renevier
Nanoscale, 2018, 10, 11585 - 11596

Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films
F. Mercier, H. Shimoda,  S. Lay, M. Pons, E. Blanquet
CrystEngComm, 2018, 20, 1711 – 1715

Superconducting properties of NbTiN thin films deposited by high-temperature chemical vapor deposition
D. Hazra,  N. Tsavdaris, A. Mukhtarova, M. Jacquemin,  F. Blanchet, R. Albert, S. Jebari, A. Grimm, A. Konar, E. Blanquet, F. Mercier, C. Chapelier, M. Hofheinz
Physica Review B, 2018, 97, 144518 -5.

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
L. Tian, S. Ponton, M. Benz, A. Crisci, R. Reboud, G. Giusti, F. Volpi, L. Rapenne, C. Vallée, M. Pons, A. Mantoux, C. Jiménez, E. Blanquet
Surface & Coatings Technology 347, 2018,  181–190

A Chemical Vapor deposition Route to Epitaxial Superconducting NbTiN Thin films

N. Tsavdaris, D. Harza, S. Coindeau, G. Renou, F. Robaud, E. Sarigiannidou, M. Jacquemin, R. Reboud, M. Hofheinz, E. Blanquet, F. Mercier
Chem. Mater., 2017, 29 (14), 5824–5830.

 Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation
T. R. Mayangsari, L. L. Yusup, J.-M. Park, E. Blanquet, Mi. Pons, J. Jung, W.-J. Lee
J. Cryst. Growth, 2017, 468, 278-282.

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in situ steam generation oxidation and dry furnace oxidation.

F. Roze, O. Gourhant, E. Blanquet, F. Bertin, M. Juhel, F. Abbate, C. Pribat, R. Duru
J. Appl.
Physics, 2017, 121, 245308, 1-10.

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition
D. Hazra, N. Tsavdaris, S. Jeabar, A. Rimm, F. Blanchet, F. Mercier, E. Blanquet, C. Chapelier, M. Hofheinz
Superconductor Science and Technology, 2016, 29, 105011-5p.

Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition
R.  Boichot, L.  Tian, M. I. Richard, A.  Crisci, A. Chaker, V. Cantelli, S.  Coindeau, S.  Lay, T. Ouled, C. Guichet, M-H  Chu, N.  Aubert, G. Ciatto, E. Blanquet, O.  Thomas, J. L.  Deschanvres, D.  Fong, H. Renevier
Chemistry of Materials, 2016, 28 (2), 592–600.


Activities / Resume

1987 :      Engineering Degree from Ecole Nationale Supérieure d’Electrochimie et Electrométallurgie de Grenoble (ENSEEG/INPG),  Materials science
1987 :       Master degree ENSEEG, Metallurgy
1990 :      PhD Institut National Polytechnique de Grenoble
 “CVD of silicides for Microelectronics
2000 :       HDR, INPG
Developments of thin films by CVD: Experiments and process simulations

1991-93 :  Engineer NASA Lewis Research Center Cleveland, Ohio - USA 
1993 :        CNRS Research assistant CR2 ; Chemistry Institute, LTPCM
2010:         CNRS Research Director, SIMAP

Deputy Director of PEM (Physics, Engineering, Materials) of COMUE UGA
Deputy Director of SIMaP lab
Director of research group GDR RAFALD (French community working on ALD)
Coordinator IRP Interdisciplinary Research Project “Thin Films Engineering” of labex CEMAM Centre of Excellence of Multifunctional Architectured Materials (2010- )
Coordinator of “Materials for energy” of Communauté Académique de Recherche (ARC) ENERGIES Rhône-Alpes, ARC4 (2012-).


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Date of update April 3, 2020

Université Grenoble Alpes