Aller au menu Aller au contenu
Science and Engineery of Materials and Processes

> SIMAP_Research > SIMAP_TOP_EN

Image gallery : Thin films


[legende-image]1383921770443[/legende-image]
Various micrometric objects covered by the ALD technique (here TaN and Ta2O5)

[legende-image]1383921770450[/legende-image]
4 inch silicon wafer covered with 80 nm of AlN (ALD technique)

[legende-image]1383921770469[/legende-image]
Multilayer of epitaxial nitrides and structure identification

[legende-image]1383921770473[/legende-image]
Localised growth of epitaxial AlN on silicon pillars

[legende-image]1383921770474[/legende-image]
Numerical modeling of Halide CVD reactor for upscaling of AlN deposition

[legende-image]1383921770477[/legende-image]
ALD/CVD reactor implemented on the diffractometer of the SIRIUS beamline at the French synchrotron SOLEIL (collaboration LMGP, SIMAP, SOLEIL, IM2NP, LMOPS)

[legende-image]1383921770445[/legende-image]
2 inch epitaxial AlN grown on sapphire by the Halide-CVD technique

[legende-image]1383921770451[/legende-image]
Halide CVD reactor at SIMAP


[legende-image]1383921770472[/legende-image]
2 inch epitaxial NbN grown on sapphire by the Halide-CVD technique

[legende-image]1383921770471[/legende-image]
Superconducting properties of epitaxial NbTiN grown by Halide CVD

[legende-image]1383921770475[/legende-image]
Atomic structure of the AlN/SiC interface

Date of update September 20, 2017

Univ. Grenoble Alpes