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Published on February 5, 2016
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February 5, 2016

First atomic layers determine the quality of thin films prepared by ALD: in-situ caracterisation of grain growth during film deposition

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Simap-carrousel-en-Boichot-2016-bis.jpg

Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition
Chemistry of Materials, 2016, DOI: 10.1021/acs.chemmater.5b04223
R. Boichot, L. Tian, M.-I. Richard, A. Crisci, A. Chaker, V. Cantelli, S. Coindeau, S. Lay, T. Ouled, C. Guichet, M. H. Chu, N. Aubert, G. Ciatto, E. Blanquet, O. Thomas, J.-L. Deschanvres, D. D. Fong, and H. Renevier

A complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films is dependent strongly on the nature of the interfacial bonds.
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Written by Sabine Lay

Date of update February 5, 2016

Communauté Université Grenoble Alpes
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