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Directeur de Recherches CNRS

Coordonnées

SIMaP-Grenoble INP-CNRS5266-UJF (Phelma-Campus) 1130 rue de la Piscine, BP 75 38402 Saint Martin D'Hères, France Tel : 33 4 76826532 ; Fax : 33 4 76826663 ; email : Michel.Pons@simap.grenoble-inp.fr http://simap.grenoble-inp.fr/

Site internet : http://

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Key words : transport phenomena modeling, CVD reactors, epitaxial growth, silicon carbide, aluminium nitride, thin films, coatings
Recent papers (2013-2017) more information @ https://scholar.google.com/citations?user=bRpkAqgAAAAJ&hl=fr

A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system”, J. Su, X. Chen, Y. Li, M.l Pons, E. Blanquet, J. Crystal Growth, 468, 2017, 914-918.
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process, M. Pons, J. Su, M. Chubarov, R. Boichot, F. Mercier, E. Blanquet, G. Giusti, D. Pique, J. Crystal Growth, 468, 2017, 235-240
Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation”, T.R. Mayangsari, L.L. Yusup, J. Park, E. Blanquet, M. Pons, J. Jung, W. Lee,
J. Crystal Growth, 468, 2017, 278-282.
Evidence for a Cr metastable phase as a tracer in DLI-MOCVD chromium hard coatings usable in high temperature environment, A. Michau, F. Maury, F. Schuster, R. Boichot, M. Pons, Applied Surface Science, 422, 2017, 198-206.Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach", R. Boichot, D. Chen, F. Mercier, F. Baillet, G. Giusti, T. Coughlan, M. Chubarov, M. Pons, Coatings,7(9), 2017, 136 (20 pages).Chromium Carbide Growth at Low Temperature by a Highly Efficient DLI-MOCVD Process in Effluent Recycling Mode, A. Michau, F. Maury, F. Schuster, R. Boichot, M. Pons, E. Monsifrot, Surf. Coat. Technol., 332, 2017, 96-104.

Growth of boron nitride films on w-AlN (0001), 4 degrees off-cut 4H-SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition, N; Coudurier, M. Chubarov, R. Boichot, F. Mercier, E. Blanque, R. Reboud, S. Lay, A. Crisci, S. Coindeau, T. Encinas, M. Pons, Crystal Reasearch and Technology, 51(3), 2016, 231-238.
Ni-and Cu-free Ti-based metallic glasses with potential biomedical application, Y. Guo, I. Bataev, A.M. Jorge, R.P. Nogueira, M. Pons, A.R. Yavari, Intermetallics, 63, 2015, 86-96
Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates", I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari, Surf. Coat. Technol., 239, 2014, 171-176.
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy, A. Claudel, V. Felmann, I. Gelard, N. Coudurier, D. Sauvage, M. Baladji, E. Blanquet, R. Boichot, G. Beutier, S. Coindeau, A. Crisci, K. Baskar, M. Pons, Thin solid Films, 573, 2014, 140-147.
CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation.
, R. Boichot, N. Coudurier, F. Mercier, A. Claudel, N. Baccar, A. Milet, E. Blanquet, M. Pons, Theoretical Chem. Accounts, 133, 2014, UNSP 1419
Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates, I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari, Surf. Coat. Technol., 239, 2014, 171-176
Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates, I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari, Surf. Coat. Technol., 239, 2014, 171-176
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy, A. Claudel, V. Felmann, I. Gelard, N. Coudurier, D. Sauvage, M. Baladji, E. Blanquet, R. Boichot, G. Beutier, S. Coindeau, A. Crisci, K. Baskar, M. Pons, Thin solid Films, 573, 2014, 140-147.
Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE).
N Coudurier, R Boichot, F Mercier, R Reboud, S Lay, E. Blanquet, M. Pons, Physics Procedia, 46, 2013, 102-106
High temperature chemical vapor deposition of aluminium nitride, growth and evaluation, M Pons, R Boichot, N Coudurier, A Claudel, E Blanquet, S Lay, F Mercier, D Pique, Surf. Coat. Technol., 230, 2013, 118-125
Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy, N Coudurier, R Boichot, V Fellmann, A Claudel, E Blanquet, A Crisci, S Coindeau, D Pique, M Pons, Phys. Stat. Sol C, 10, 2013, 362-365

Activités / CV

Michel PONS is Research Director at the French National Center for Scientific Research (CNRS). He received his Engineer degree in Metallurgy in 1978 and PhD Degree in Physics in 1982 both from the University of Grenoble. He joined CNRS in 1982 where he carried out experimental and theoretical research on the protection of steels against wear and corrosion by surface treatments (laser and ion implantation). He joined for two years Microelectronics R&D (1987-1989) to develop tungsten metallization by Chemical Vapor deposition and the modeling and simulation of CVD reactors. Since 1990, he participated in research on CVD thin films and coatings for microelectronic and metallurgical applications. Since 20 years, his research interests are in developing reactors and modeling for high temperature growth and/or epitaxy of silicon carbide, aluminum nitride and advanced nitrides. He is managing in this field national and international research programs. In parallel, he was director of a joint laboratory between the university and industry for SiC growth (2003-2007), director of the SIMAP laboratory for 10 years (2007-2015) "Science et Ingénierie des Matériaux et Procédés: http://simap.grenoble-inp.fr" and from 2016, coordinator of a project linking research and innovation in Energy of public laboratories (Carnot Institutes) to SME industrial needs (http://energics.eu) . Pons has published more than 200 research articles, presented over 100 conference talks, contributed to six chapters in technical books and holds 12 patents. Pons can be reached by e-mail at michel.pons@simap.grenoble-inp.fr.

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Rédigé par Michel Pons

mise à jour le 15 janvier 2018

Communauté Université Grenoble Alpes