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Grenoble INP
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Directeur de Recherches CNRS

Coordonnées

SIMaP-Grenoble INP-CNRS5266-UJF (Phelma-Campus) 1130 rue de la Piscine, BP 75 38402 Saint Martin D'Hères, France Tel : 33 4 76826532 ; Fax : 33 4 76826663 ; email : Michel.Pons@simap.grenoble-inp.fr http://simap.grenoble-inp.fr/

Site internet : http://

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Key words : transport phenomena modeling, CVD reactors, epitaxial growth, silicon carbide, aluminium nitride, thin films, coatings

Papers 2013-2015 (more in https://scholar.google.com/citations?user=bRpkAqgAAAAJ&hl=fr)

Growth of boron nitride films on w-AlN (0001), 4 degrees off-cut 4H-SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition, N; Coudurier, M. Chubarov, R. Boichot, F. Mercier, E. Blanque, R. Reboud, S. Lay, A. Crisci, S. Coindeau, T. Encinas, M. Pons, Crystal Reasearch and Technology, 51(3), 2016, 231-238.

Ni-and Cu-free Ti-based metallic glasses with potential biomedical application, Y. Guo, I. Bataev, A.M. Jorge, R.P. Nogueira, M. Pons, A.R. Yavari, Intermetallics, 63, 2015, 86-96

Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates", I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari,
Surf. Coat. Technol., 239, 2014, 171-176.

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy, A. Claudel, V. Felmann, I. Gelard, N. Coudurier, D. Sauvage, M. Baladji, E. Blanquet, R. Boichot, G. Beutier, S. Coindeau, A. Crisci, K. Baskar, M. Pons, Thin solid Films, 573, 2014, 140-147.

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation.
, R. Boichot, N. Coudurier, F. Mercier, A. Claudel, N. Baccar, A. Milet, E. Blanquet, M. Pons, Theoretical Chem. Accounts, 133, 2014, UNSP 1419

Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates
, I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari, Surf. Coat. Technol., 239, 2014, 171-176

Structure and deformation behavior of Zr–Cu thin films deposited on Kapton substrates, I. Bataev, N.T. Panagiotopoulos, F. Charlot, A.M. Jorge Junior, M. Pons, G.A. Evangelakis, A.R. Yavari, Surf. Coat. Technol., 239, 2014, 171-176

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy, A. Claudel, V. Felmann, I. Gelard, N. Coudurier, D. Sauvage, M. Baladji, E. Blanquet, R. Boichot, G. Beutier, S. Coindeau, A. Crisci, K. Baskar, M. Pons, Thin solid Films, 573, 2014, 140-147.

Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE).
N Coudurier, R Boichot, F Mercier, R Reboud, S Lay, E. Blanquet, M. Pons,
Physics Procedia, 46, 2013, 102-106

High temperature chemical vapor deposition of aluminium nitride, growth and evaluation,
M Pons, R Boichot, N Coudurier, A Claudel, E Blanquet, S Lay, F Mercier, D Pique, Surf. Coat. Technol., 230, 2013, 118-125

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
, N Coudurier, R Boichot, V Fellmann, A Claudel, E Blanquet, A Crisci, S Coindeau, D Pique, M Pons, Phys. Stat. Sol C, 10, 2013, 362-365

Activités / CV

Michel PONS is Research Director at the French National Center for Scientific Research (CNRS). He received his Engineer degree in Metallurgy in 1978 and PhD Degree in Physics in 1982 both from the University of Grenoble. He joined CNRS in 1982 where he carried out experimental and theoretical research on the protection of steels against wear and corrosion by surface treatments (laser and ion implantation). He joined for two years Microelectronics R&D (1987-1989) to develop tungsten metallization by Chemical Vapor deposition and the modeling and simulation of CVD reactors. Since 1990, he participated in research on CVD thin films and coatings for microelectronic and metallurgical applications. Since 20 years, his research interests are in developing reactors and modeling for high temperature growth and epitaxy of silicon carbide and aluminum nitride. He is managing in this field national and international research programs. In parallel, he was director of a joint laboratory between the university and industry (2003-2007) and director of the SIMAP laboratory for 10 years (2007-2015) "Science et Ingénierie des Matériaux et Procédés: http://simap.grenoble-inp.fr". Pons has published more than 200 research articles, presented over 100 conference talks, contributed to six chapters in technical books and holds three patents. Pons can be reached by e-mail at michel.pons@simap.grenoble-inp.fr.

Dowload EUROCVD 2013 invited talk

 

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Rédigé par Michel Pons

mise à jour le 14 mars 2017

Communauté Université Grenoble Alpes
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